Heterojunction IMPATT diodes
- 1 January 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (8) , 1829-1834
- https://doi.org/10.1109/16.144671
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Basic Principles and Properties of Avalanche Transit-Time DevicesIEEE Transactions on Microwave Theory and Techniques, 1970
- Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- A Proposed High-Frequency, Negative-Resistance DiodeBell System Technical Journal, 1958