Theory for power output and efficiency of silicon TRAPATT oscillators

11 June 1970

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 6 (12) , 384-385
https://doi.org/10.1049/el:19700268

Abstract

A TRAPATT analysis is employed to obtain theoretical results for the efficiency and power output of silicon p⁺-n-n⁺ avalanche diodes at different frequencies. This is done for a range of doping densities and depletion-layer widths, and enables detailed design curves to be deduced.

Keywords

POWER OUTPUT
SILICON
TRAPATT ANALYSIS
DESIGN CURVES
DOPING DENSITIES
THEORETICAL RESULTS
ENABLES DETAILED
AVALANCHE DIODES

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