A new multilevel storage structure for high density CCD memory
- 1 October 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 13 (5) , 688-693
- https://doi.org/10.1109/JSSC.1978.1051120
Abstract
A multilevel storage (MLS) structure for high density CCD memory is proposed and demonstrated. Using four levels of charge, 2 bits can be stored in one storage cell. Stored charge is transferred by a clocking scheme which provides larger charge-carrying capacity without increasing memory cell size. These techniques make it possible to achieve high packing density without requiring fine patterning.Keywords
This publication has 4 references indexed in Scilit:
- Overview of CCD memoryIEEE Transactions on Electron Devices, 1976
- A 64-kbit block addressed charge-coupled memoryIEEE Transactions on Electron Devices, 1976
- Design of a 16 384-bit serial charge-coupled memory deviceIEEE Transactions on Electron Devices, 1976
- CCD memory optionsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1973