Shapes of agglomerates in plasma etching reactors
- 1 May 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (9) , 5960-5965
- https://doi.org/10.1063/1.364384
Abstract
Dust particle contamination of wafers in reactive ion etching (RIE) plasma tools is a continuing concern in the microelectronics industry. It is common to find that particles collected on surfaces or downstream of the etch chamber are agglomerates of smaller monodisperse spherical particles. The shapes of the agglomerates vary from compact, high fractal dimension structures to filamentary, low fractal dimension structures. These shapes are important with respect to the transport of particles in RIE tools under the influence electrostatic and ion drag forces, and the possible generation of polarization forces. A molecular dynamics simulation has been developed to investigate the shapes of agglomerates in plasma etching reactors. We find that filamentary, low fractal dimension structures are generally produced by smaller (<100s nm) particles in low powered plasmas where the kinetic energy of primary particles is insufficient to overcome the larger Coulomb repulsion of a compact agglomerate. This is analogous to the diffusive regime in neutral agglomeration. Large particles in high powered plasmas generally produce compact agglomerates of high fractal dimension, analogous to ballistic agglomeration of neutrals.This publication has 12 references indexed in Scilit:
- A model for transport and agglomeration of particles in reactive ion etching plasma reactorsJournal of Vacuum Science & Technology A, 1996
- Charging, transport and heating of particles in radiofrequency and electron cyclotron resonance plasmasPlasma Sources Science and Technology, 1994
- Optical characterization of particle trapsPlasma Sources Science and Technology, 1994
- On form and flow in dusty plasmasPlasma Sources Science and Technology, 1994
- Contamination particle traps due to a cone, cube and diskPlasma Sources Science and Technology, 1994
- Particle transport modelling in semiconductor process environmentsPlasma Sources Science and Technology, 1994
- Spatial distributions of dust particles in plasmas generated by capacitively coupled radiofrequency dischargesPlasma Sources Science and Technology, 1994
- Plasma particle interactionsPlasma Sources Science and Technology, 1994
- A particle-in-cell simulation of dust charging and shielding in low pressure glow dischargesIEEE Transactions on Plasma Science, 1994
- Kinetics of particle formation in the sputtering and reactive ion etching of siliconJournal of Vacuum Science & Technology A, 1992