Silicon P-N Junction Alloy Diodes
- 1 November 1952
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 40 (11) , 1348-1351
- https://doi.org/10.1109/jrproc.1952.273960
Abstract
A new type of p-n junction silicon diode has been prepared by alloying acceptor or donor impurities with n- or p-type silicon. The unique features of this diode are: (a) reverse currents as low as 10-10 amperes, (b) rectification ratios as high as 108 at 1 volt, (c) a Zener characteristic in which d(log I)/d(log V) may be an high as 1,500 over several decades of current, (d) a stable Zener voltage which may be fixed in the production process at values between 3 and 1,000 volts, and (e) ability to operate at ambient temperatures as high as 300°C.Keywords
This publication has 5 references indexed in Scilit:
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- Junction Rectifier and Photo-CellPhysical Review B, 1951
- Junctions Prepared by Impurity DiffusionPhysical Review B, 1950
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- Development of Silicon Crystal Rectifiers for Microwave Radar ReceiversBell System Technical Journal, 1947