Assessment of epitaxial layers by automated scanning double axis diffractometry
- 2 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 65 (1-3) , 672-678
- https://doi.org/10.1016/0022-0248(83)90117-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High purity InP and InGaAsP grown by liquid phase epitaxyJournal of Crystal Growth, 1982
- Molecular-beam epitaxial growth of uniform Ga0.47In0.53As with a rotating sample holderApplied Physics Letters, 1981