Gunn Domain Dynamics
- 1 July 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (8) , 3191-3195
- https://doi.org/10.1063/1.1703183
Abstract
A phenomenological equation for the motion of carriers in a Gunn diode is written in terms of an average drift velocity and an average diffusion coefficient, both of which are functions of the field only. The equation can be reduced to a simple form in the case of a steady‐state dipole domain with a flat top. Various properties of the domain can be deduced using only elementary analytical methods. As an example, it is found that although the domain boundary shapes change with carrier concentration the domain velocity remains constant and equal to the drift velocity of the carriers in the uniform field regions, provided the mobility is independent of concentration.This publication has 4 references indexed in Scilit:
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966
- Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobilityIEEE Transactions on Electron Devices, 1966
- Theory of stable domain propagation in the Gunn effectPhysics Letters, 1965
- Instabilities of Current in III–V SemiconductorsIBM Journal of Research and Development, 1964