Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE

This publication has 3 references indexed in Scilit:

• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
  Thin Solid Films, 1988
• Zn related electroluminescent properties in MOVPE grown GaN
  Journal of Crystal Growth, 1988
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
  Applied Physics Letters, 1986