Raman Scattering in ZnTe
- 15 March 1970
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (4) , 1444-1450
- https://doi.org/10.1063/1.1659054
Abstract
The Raman spectrum of ZnTe has been investigated. The fundamental frequencies have been found to be v̄LO=208.3±0.5 cm−1 and v̄TO= 177.5±0.5 cm−1. The temperature variation of v̄LO has been examined between room temperature and 4°K. The zone boundary frequencies at the critical points X, L, and W have been estimated from the second‐order Raman spectrum. In determining these frequencies a theoretical model was used to assist in the assignment of the frequencies and as a check on the consistency of the results. The values obtained were further checked using regularities previously observed in the phonon spectra of zinc‐blende semiconductors.This publication has 25 references indexed in Scilit:
- Lattice dynamics of III–V compoundsCanadian Journal of Physics, 1969
- Infrared Lattice Vibrations of Zinc Selenide and Zinc TellurideJournal of Applied Physics, 1968
- Optical Properties of Zinc TelluridePhysical Review B, 1967
- Volume Compressibility of BeO and Other II-VI CompoundsJournal of Applied Physics, 1965
- Optically Active Phonon Processes in CdS and ZnSPhysical Review B, 1964
- Refractive Index of ZnSe, ZnTe, and CdTeJournal of Applied Physics, 1964
- Phonon Assignments in ZnSe and GaSb and Some Regularities in the Phonon Frequencies of Zincblende-Type SemiconductorsPhysical Review B, 1963
- Theory of Infrared and Raman Processes in Crystals: Selection Rules in Diamond and ZincblendePhysical Review B, 1963
- Sum Rule for Lattice Vibrations; Application to Forces in Diamond StructuresPhysical Review B, 1963
- Vapor-Phase Growth of Single Crystals of II–VI CompoundsJournal of Applied Physics, 1961