Electron Microscopy of Prismatic Dislocations in Silicon
- 1 February 1962
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (2) , 568-569
- https://doi.org/10.1063/1.1702467
Abstract
Transmission electron micrographs of (111) prismatic loops in gold-diffused silicon have been obtained. The loops were about 2 μ in diameter. From the contrast effects seen and for a number of other reasons it is concluded that the loops surround a stacking fault rather than coherent platelets of gold.This publication has 5 references indexed in Scilit:
- The preparation of thin films of germanium and siliconBritish Journal of Applied Physics, 1961
- Gold-Induced Climb of Dislocations in SiliconJournal of Applied Physics, 1960
- A kinematical theory of diffraction contrast of electron transmission microscope images of dislocations and other defectsPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1960
- Properties of Silicon Doped with Iron or CopperPhysical Review B, 1957
- Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°KPhysical Review B, 1955