‘‘New donors’’ in silicon: A quantum well controlled conductivity
- 10 November 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19) , 1266-1268
- https://doi.org/10.1063/1.97627
Abstract
The first stages of the formation of the so called ‘‘new donors’’ is studied by annealing initially n‐type Czochralski silicon at 580 °C for 24–360 h. The analysis of electrical properties using the admittance spectroscopy technique reveals that the freezing of carriers is controlled by an activation energy of 20 meV, and a discrete level is detected at 19 meV. These effects are tentatively ascribed to levels localized within quantum wells surrounding small positively charged oxide precipitates.Keywords
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