A critical examination of the mechanics of dynamic NBTI for PMOSFETs

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22 March 2004

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 69, 14.4.1-14.4.4
https://doi.org/10.1109/iedm.2003.1269295

Abstract

No abstract available

This publication has 1 reference indexed in Scilit:

Generalized diffusion-reaction model for the low-field charge-buildup instability at the Si- ${SiO}_{2}$ interface
Physical Review B, 1995