THE CONCEPT OF “SURFACE-TRAPPED HOLE” IN n-TYPE SEMICONDUCTORS AND THE CONDITIONS FOR EFFICIENT AND STABLE PHOTOELECTROCHEMICAL CELLS
- 5 March 1981
- journal article
- Published by Oxford University Press (OUP) in Chemistry Letters
- Vol. 10 (3) , 383-386
- https://doi.org/10.1246/cl.1981.383
Abstract
The competition between decomposition and electron transfer reactions at an n-GaP electrode under illumination was explained on the basis of the concept of the “surface-trapped hole”. It is concluded that an efficient and stable photoelectrochemical cell can be constructed by use of a redox couple having the standard redox potential slightly more negative than the redox potential of the surface-trapped hole.This publication has 4 references indexed in Scilit:
- Photoanodic Dissolution Reaction of an n‐Type Gallium Phosphide Electrode and Its Effect on Energies of the Electronic Bands at the SurfaceJournal of the Electrochemical Society, 1980
- The Role of Energy Levels in Semiconductor‐Electrolyte Solar CellsJournal of the Electrochemical Society, 1978
- Thermodynamic Potential for the Anodic Dissolution of n-Type SemiconductorsJournal of the Electrochemical Society, 1977
- On the stability of semiconductor electrodes against photodecompositionJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1977