2V BiCMOS downconverter and upconverter chips for 1.8-5GHz band wireless communications networks
- 1 October 1995
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 77-80
- https://doi.org/10.1109/euma.1995.336920
Abstract
This paper concerns with the design considerations and performance results for BiCMOS down-converter and upconverter modules developed for mobile and personal communications applications. Each module, which integrates a bipolar RF amplifier, a BiCMOS simplified Gilbert mixer, and an NMOS IF amplifier on a single chip, is designed to operate at 2V over 1.8-5.4GHz frequency band with a maximum conversion gain higher than 34dB. Power dissipation for the downconverter and upconverter modules is, 18mW and 24mW, respectively, and chip size for both modules is 1.0mm × 0.7mm.Keywords
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