Analytical closed form expressions for the effective band edges in shallow quantum wells
- 16 May 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (20) , 2694-2696
- https://doi.org/10.1063/1.111494
Abstract
Shallow quantum wells are widely used in electronic and optoelectronic heterostructure devices. However, to determine the effective band edges, one needs numerical techniques unless the barrier height is infinite. In this letter the nearly free electron approach used in periodic structures is exploited to provide accurate energy level expressions for the electronic ground state in a number of important quantum wells with different shapes. These include the square quantum well without and with an applied transverse electric field.Keywords
This publication has 5 references indexed in Scilit:
- Symmetric self-electro-optic effect device array grown by metalorganic vapor phase epitaxy using GaAs/Al0.04Ga0.96As shallow quantum wellsApplied Physics Letters, 1993
- High-power extremely shallow quantum-well modulatorsIEEE Photonics Technology Letters, 1991
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Effect of an electric field on the luminescence of GaAs quantum wellsPhysical Review B, 1982
- Quantum States of Confined Carriers in Very Thin -GaAs- HeterostructuresPhysical Review Letters, 1974