Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist
- 1 October 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (10R)
- https://doi.org/10.1143/jjap.28.2053
Abstract
Negative photoresist, LMR-UV, has been developed for i-line lithography. It resolves isolated 0.3 µm space and 0.35 µm hole patterns of 1.0 µm thickness by using a 0.42-numerical-aperture i-line reduction projection aligner. LMR-UV gives overhung profiles because of its large absorption coefficient of 3.8 µm-1 at the i-line. New phase-shifting mask patterns which are adapted to isolated space and hole patterns for negative resist have been developed. By use of this mask, LMR-UV clearly resolves 0.25 µm space and 0.3 µm hole patterns by using the i-line aligner. This phase-shifting mask improves both resolution and focus margin.Keywords
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