Post growth tailoring of the optical properties of GaAs-AlGaAs multiple quantum wells

5 July 1990

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 26 (14) , 1058-1059
https://doi.org/10.1049/el:19900685

Abstract

The post-growth bandgap engineering of a fifty period multiple quantum well is reported. A controlled blue shift of the band edge is achieved through the deposition of a SiO_x encapsulant followed by rapid thermal annealing giving shifts of up to 16meV. The expected depth dependence of this process is not observed and thus the blue shifted samples retain clearly resolved room temperature excitonic features and preserve the quantum confined Stark effect.

Keywords

SEMICONDUCTORS
OPTICAL PROPERTIES
BANDGAP TAILORING
CONTROLLED BLUE SHIFT
QUANTUM CONFINED STARK EFFECT
ROOM TEMPERATURE EXCITONIC FEATURES
SIOX ENCAPSULANT
RTA
GAAS-ALGAAS
RAPID THERMAL ANNEALING
MULTIPLE QUANTUM WELLS
POST-GROWTH BANDGAP ENGINEERING
MQW

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