Methoden zur untersuchung inhomogener dotierstoff-verteilung in silicium-einkristallen
- 30 September 1969
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 12 (9) , 731-733
- https://doi.org/10.1016/0038-1101(69)90068-9
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Resistivity Inhomogeneities in Silicon CrystalsJournal of the Electrochemical Society, 1967
- Notizen: Widerstandsfeinstreifungen in tiegelgezogenen Si-KristallenZeitschrift für Naturforschung A, 1965
- Auswirkung rtlich sehr hoher Dotierstoffkonzentrationen in Silicium-EinkristallenThe European Physical Journal A, 1964
- Boron-Induced Microstrains in Dislocation-Free Silicon CrystalsJournal of Applied Physics, 1963