Impurity states inSiO2
- 15 February 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (4) , 2216-2220
- https://doi.org/10.1103/physrevb.29.2216
Abstract
A theory of the major chemical trends in the deep-energy levels of impurities in is presented. The observations by ESR that substitutional Ge and P produce deep levels in the band gap are explained.
Keywords
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