Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

Preprint

19 April 2005

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0504486

Abstract

The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 um2 and resistance-area product RA in the range of 0.5-10 Ohm m2 (dR/R=1-20%). Current-induced magnetization switching is observed with a critical current density of about 8e6 A/cm2. The attribution of the switching to the spin-transfer effect is supported by a current-induced dR/R value identical to the one obtained from the R versus H measurements. Furthermore, the critical switching current density has clear dependence on the applied magnetic field, consistent with what has been observed previously in the case of spin-transfer induced switching in metallic multilayer systems.

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Version 1, 2005-04-19, ArXiv
Published version: Applied Physics Letters, 84 (16), 3118.

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