Formation of submicron isolation in GaAs by implanting a focused boron ion beam emitted from a Pd–Ni–Si–Be–B LM ion source
- 1 January 1985
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 3 (1) , 54-57
- https://doi.org/10.1116/1.583290
Abstract
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