Effects of strain on boron diffusion in Si and Si1−xGex
- 30 January 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (5) , 580-582
- https://doi.org/10.1063/1.114019
Abstract
Boron diffusion in in situ doped Si1−xGex and Si, subjected to inert‐ambient furnace annealing at 800 °C, was investigated. For Si1−xGex, the effect of biaxial compressive and tensile strain on boron diffusion was studied using Si1−xGex layers with a constant Ge content (x≊0.10 and x≊0.20) grown epitaxially on various relaxed Si1−yGey (0≤y≤0.20) substrates. Boron diffusion is primarily a function of Ge content, x in the Si1−xGex layers, and does not show a strong dependence on macroscopic biaxial strain. For Si, the effect of biaxial tension was investigated using relaxed Si1−yGey layers as substrate templates for epitaxial Si layers. As in Si1−xGex, boron diffusion in Si does not depend strongly on biaxial strain.Keywords
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