Thermal stability of coevaporated Al-Pt thin films on GaAs substrates

23 July 1990

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 57 (4) , 392-394
https://doi.org/10.1063/1.103671

Abstract

We report on the stability of Al‐Pt coevaporated thin films on GaAs substrates for aluminum concentrations ranging from 45 to 70 at. %. We show that for the region with compositions between AlPt and Al₂Pt these alloy thin films fulfill the thermal stability requirements imposed by GaAs self‐aligned gate technology.

Keywords

ALUMINIUM ALLOYS
PLATINUM ALLOYS
VACUUM EVAPORATION
GALLIUM ARSENIDES
THERMODYNAMIC PROPERTIES
CHEMICAL COMPOSITION
MESFET
METALLIZATION
SAMPLE PREPARATION
THIN FILMS
AL‐PT

This publication has 14 references indexed in Scilit: