Apparatus for the Measurement of Galvanomagnetic Effects in High Resistance Semiconductors
- 1 July 1961
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 32 (7) , 842-846
- https://doi.org/10.1063/1.1717527
Abstract
An apparatus for the measurement of galvanomagnetic effects in high resistance semiconductors is described. The apparatus allows the resistivities of samples to be measured whose resistances fall within the range 10−1 to 1012 Ω. The Hall coefficients of these samples can also be determined with the apparatus as long as the charge carrier mobilities of the samples exceed 1 cm2/v sec. A discussion is given of the fundamental limitations of Hall coefficient measuring equipment.Keywords
This publication has 2 references indexed in Scilit:
- MAGNETORESISTANCE AND FIELD DEPENDENCE OF THE HALL EFFECT IN INDIUM ANTIMONIDECanadian Journal of Physics, 1958
- Apparatus for Measuring Resistivity and Hall Coefficient of SemiconductorsReview of Scientific Instruments, 1955