The Kinetics of Recombination Radiation and the Temperature of the Electron–Hole Plasma in Silicon
- 1 November 1974
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 66 (1) , 53-62
- https://doi.org/10.1002/pssb.2220660104
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Electron-Hole Liquids in SemiconductorsPhysical Review B, 1973
- Condensation of excitons in germanium and siliconJournal of Physics C: Solid State Physics, 1972
- Condensation of non-equilibrium charge carriers in semiconductorsPhysica Status Solidi (a), 1972
- Metallic State of the Electron-Hole Liquid, Particularly in GermaniumPhysical Review Letters, 1972
- Valley-Orbit Splitting of Free Excitons? The Absorption Edge of SiPhysical Review Letters, 1970