Anisotropic reactive ion etching of InP in methane/hydrogen based plasmas

Abstract
Reactive ion etching of InP in CH4/H2 has been studied to assess anisotropy and surface morphology. Empirical models have been developed for etch and polymer deposition rates. Highly anisotropic features characterized by high ratios of etch to polymer formation rates are obtained at low methane concentration and relatively high power density. The inclusion of oxygen in the gas composition reduces polymer deposition but increases surface roughness.