Photoluminescence determination of the pressure and temperature of the shock wave induced by a picosecond laser pulse in the layered semiconductor GaSe
- 15 January 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (2) , 942-946
- https://doi.org/10.1103/physrevb.31.942
Abstract
The pressure and temperature of the shock waves generated by a picosecond laser pulse in the layered semiconductor gallium selenide were determined by shock-induced changes of the photoluminescence spectra. The peak pressure was measured to be about 13 kbar, while the temperature remained the same during the measured time range. Our results are consistent with the pressure measurements made with a piezoelectric transducer.Keywords
This publication has 17 references indexed in Scilit:
- Laser-driven shock-wave propagation in pure and layered targetsPhysical Review A, 1983
- Simultaneous Multimode Pressure-Induced Frequency-Shift Measurements in Shock-Compressed Organic Liquid Mixtures by Use of Reflected Broadband Coherent Anti-Stokes Raman ScatteringPhysical Review Letters, 1983
- Photoluminescence spectra of the layered semiconductor gallium selenide under intense picosecond laser-pulse excitationsPhysical Review B, 1983
- On exciton absorption, band structure, and phase transformation of GaSe under pressurePhysica Status Solidi (b), 1975
- Optical Absorption Edge in GaSe under Hydrostatic PressurePhysical Review Letters, 1974
- LASER-GENERATED STRESS WAVESApplied Physics Letters, 1970
- Reactions of shock-heated carbon disulfide-argon mixtures. II. Kinetics of the dissociation of carbon disulfideThe Journal of Physical Chemistry, 1970
- Photoconductivity of GaS, GaSe, and GaTe Single Crystals under High Hydrostatic PressurePhysica Status Solidi (b), 1969
- Polymerization in a shock wavePolymer Science U.S.S.R., 1965
- Elastic Wave Generation by Electron Bombardment or Electromagnetic Wave AbsorptionJournal of Applied Physics, 1963