Ultrafast carrier trapping in high energy ion implanted gallium arsenide
- 15 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (16) , 2225-2227
- https://doi.org/10.1063/1.115866
Abstract
Time resolved photoluminescence and electrical measurements were made on MeV As, Ga, Si, and O ion implanted GaAs to doses in the range of 1×1014–5×1016 cm−2 and subsequently annealed at 600 °C for 20 min under arsine ambient. Carrier trapping times were found to decrease with increase in implantation dose for all species studied and can be shorter than 1 ps. Sheet resistance values were found to be independent of implantation dose and were of the order of 108 Ω/⧠ for As, Ga, and O implantation and ∼2×102 Ω/⧠ for the Si case due to its electrical activation. Conductivity activation energies of 0.67–0.69 eV were observed for As, Ga, and O ion implanted and annealed GaAs, which are close to the reported activation energy for annealed low‐temperature GaAs (0.65 eV).Keywords
This publication has 0 references indexed in Scilit: