Anodic Oxidation of Aluminum by Electron Tunneling through Al/Cadmium-Stearate/Al Structure
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11A) , L2031
- https://doi.org/10.1143/jjap.28.l2031
Abstract
The conduction of the monolayer Langmuir-Blodgett(LB) film consisting of Cadmium-Stearate(CdSt) may be explained by an electron tunneling process. The tunneling current through the Al/CdSt/Al sample showed a great decrease with time when a constant voltage was applied in air. Such a phenomenon seems to result from the growth of an Al2O3 layer by the anodic oxidation of the aluminum electrode enhanced by the electron tunneling.Keywords
This publication has 9 references indexed in Scilit:
- New phenomenon in ultra high electrical field on polyimide langmuir-blodgett thin insulating films.IEEJ Transactions on Fundamentals and Materials, 1987
- Elastic and inelastic tunnelling in single-layer Langmuir filmsThin Solid Films, 1980
- Direct evaluation of the hopping rate in Langmuir multilayer assembliesPhysical Review B, 1978
- AC and DC conduction in fatty acid Langmuir filmsJournal of Physics C: Solid State Physics, 1978
- Electron tunneling through fatty-acid monolayersJournal of Applied Physics, 1977
- Tunneling through Fatty Acid Salt MonolayersJournal of Applied Physics, 1971
- Gas transport through supported Langmuir-Blodgett multilayersJournal of Colloid and Interface Science, 1968
- Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963
- Volt-current characteristics for tunneling through insulating filmsJournal of Physics and Chemistry of Solids, 1962