Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition
- 8 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (15) , 1505-1507
- https://doi.org/10.1063/1.104128
Abstract
Epitaxial thin films of ferroelectric bismuth titanate Bi4Ti3O12 have been grown by pulsed laser deposition on single‐crystal [100] SrTiO3 substrates. Bismuth titanate has a high Curie temperature (675 °C) and saturation polarization values of 4 and 50 μC/cm2 along the c and b axis, respectively. Its a,b lattice parameters allow thin‐film growth on substrates such as SrTiO3, LaAlO3, MgO, etc. These single crystalline films exhibit good quality as evidenced by x‐ray diffraction, Rutherford backscattering, and transmission electron microscopy. Applications for these films include memory devices and optical displays.Keywords
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