The dissolution of metals in amorphous chalcogenides and the effects of electron and ultraviolet radiation

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Abstract
The modification to the structure and microstructure of chalcogenide films in contact with metals has been determined by electron microscopy and diffraction and the distribution of metal through these films has been determined by Auger electron spectroscopy. Chemical changes that occur when metal films are in contact with chalcogenides have been examined by X-ray photo-electron spectroscopy. Diffusion of metals into chalcogenides upon ultraviolet and electron irradiation has been examined using electron optical techniques. Extensive diffusion occurs when copper or silver is in contact with chalcogenides. Silver and copper chalcogenides are formed. The resulting concentration profile of these metals through chalcogenide films can be qualitatively explained by the existence of two diffusion mechanisms, a fast interstitial mechanism and a slow substitutional mechanism. A study of the sensitivity of amorphous chalcogenide films and amorphous chalcogenide/silver films to electron beams of varying intensity has shown that the structural and composition changes that occur in the irradiated area depend on the particular chalcogenide, whether the film is supported by a substrate and the thermal conductivity of the substrate. These studies have demonstrated the high resolution attained in patterns written by electron beams and possible electron lithographic applications. The sensitivity of chalcogenide/silver films to ultraviolet radiation has also been demonstrated. This phenomenon is associated with breaking of the silver-chalcogen bond in the silver chalcogenide surface film.