The effect of statistical dopant fluctuations on MOS device performance
- 24 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- CMOS technology for mixed signal ICsSolid-State Electronics, 1997
- Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET'sIEEE Transactions on Electron Devices, 1994
- Effects of microscopic fluctuations in dopant distributions on MOSFET threshold voltageIEEE Transactions on Electron Devices, 1992
- MOS device modeling at 77 KIEEE Transactions on Electron Devices, 1989