Resonance spectroscopy of InGaAs/InP quantum well sub-bands
- 1 August 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (8) , 797-801
- https://doi.org/10.1088/0268-1242/3/8/011
Abstract
The authors report on the infrared excitation of sub-band levels in doped InGaAs/InP quantum wells. Periodic multi-quantum-well structures and a single well have been studied. Strong resonance transitions are observed when both sub-band wavefunctions are confined to the quantum well. The experimental transition energies are compared with the results of a self-consistent potential calculation. By scanning the infrared excitation across the sample, inhomogeneities are studied with a spatial resolution of approximately=1 mm2.Keywords
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