Electronic structure offrom photoemission and inverse photoemission
- 15 October 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (15) , 9746-9751
- https://doi.org/10.1103/physrevb.58.9746
Abstract
We investigate the electronic structure of a one-dimensional spin-1 system, and hole-doped for and 0.4, employing photoemission and inverse photoemission spectroscopies. has a charge excitation gap of about 2.3 eV. Hole doping via Ca substitution in this system introduces new localized states within this gap. The existence of a finite gap eV), even in doped compounds with a variable-range-hopping transport, indicates the importance of correlation effects and disorder in determining the electronic structure in this system.
Keywords
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