Hardness anisotropy of III-V semiconducting compounds and alloys
- 15 September 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 56 (6) , 1869-1871
- https://doi.org/10.1063/1.334201
Abstract
Knoop hardness anisotropy measurements have been carried out on {100} samples of InP, both undoped and doped with sulfur to 1019 cm−3, InGaAs and InGaAsP, the latter two being in layer form. The results show that the ternary and quaternary alloys share similar hardness anisotropy characteristics characterized by two maxima at about 20° from the 〈110〉 direction, and a minimum close to the 〈100〉 direction, whereas InP shows a single maximum near the 〈100〉 direction and two minima about 6–8° from 〈110〉. Sulfur doping increases the general hardness of InP, but the shape of the curve is maintained. The relative hardness curves are discussed in relation to deformation mechanisms.This publication has 11 references indexed in Scilit:
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