Improvement of photoluminescence of molecular beam epitaxially grown Ga_xAl_yIn_1-x-yAs by using an As₂molecular beam

1 August 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 4 (8) , 275-277
https://doi.org/10.1109/edl.1983.25731

Abstract

We report the use of an As2(instead of As4) beam during molecular beam epitaxial (MBE) growth of GaxAlyIn1-x-yAs layers, lattice-matched to InP substrate. We also show that use of the As2beam improves the room-temperature photoluminescence intensities of both In0.53Ga0.47As and Ga0.39Al0.08In0.53As epilayers with more significant improvement for the latter. The substrate temperature employed was ∼ 580°C for both.

Keywords

PHOTOLUMINESCENCE
MOLECULAR BEAM EPITAXIAL GROWTH
TEMPERATURE
GALLIUM ARSENIDE
SUBSTRATES
MOLECULAR BEAMS
MOLECULAR BEAM APPLICATIONS
AVALANCHE PHOTODIODES
ARTIFICIAL INTELLIGENCE
INDIUM PHOSPHIDE

Improvement of photoluminescence of molecular beam epitaxially grown GaxAlyIn1-x-yAs by using an As2molecular beam

Abstract

Keywords

Improvement of photoluminescence of molecular beam epitaxially grown Ga_xAl_yIn_1-x-yAs by using an As₂molecular beam