Simulation model for self-ordering of strained islands in molecular-beam epitaxy
- 15 April 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (15) , 9618-9621
- https://doi.org/10.1103/physrevb.53.9618
Abstract
The growth of quasiordered ultrasmall InAs islands by molecular-beam epitaxy utilizing the intrinsic elastic strain between the islands and the substrate is a promising approach to fabricate regular arrays of defect-free quantum dots. In this paper, a simulation of the island growth kinetics based on a phenomenological approach that introduces an effective exclusion zone that mimics the strain effects surrounding a growing island is described. The simulation results, in qualitative agreement with experiments, show that the growth kinetics can induce a quasiordering in the island position if either the exclusion zone or the nuclei density is sufficiently large. © 1996 The American Physical Society.Keywords
This publication has 9 references indexed in Scilit:
- Kinetic routes to the growth of monodisperse islandsApplied Physics Letters, 1995
- Surface migration induced self-aligned InAs islands grown by molecular beam epitaxyApplied Physics Letters, 1995
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994
- Critical layer thickness for self-assembled InAs islands on GaAsPhysical Review B, 1994
- Visible photoluminescence from N-dot ensembles and the linewidth of ultrasmall As/As quantum dotsPhysical Review B, 1994
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfacesApplied Physics Letters, 1993
- Direct synthesis of semiconductor quantum‐wire and quantum‐dot structuresAdvanced Materials, 1993
- The effect of nucleation conditions on the topology and geometry of two-dimensional grain structuresActa Metallurgica, 1987