High efficient GaAlAs light-emitting diodes of 660 nm with a double heterostructure on a GaAlAs substrate
- 1 December 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (11) , 1034-1036
- https://doi.org/10.1063/1.94220
Abstract
A new type GaAlAs light-emitting diode of 660 nm with a double heterostructure fabricated on a GaAlAs substrate has been developed. It can provide high efficiency of 8.0% and high speed response with a cut-off frequency of 20 MHz. The GaAlAs substrate is transparent at the emission wavelength of 650–660 nm, bringing about a reduction of internal absorption to increase the efficiency. The DH structure produces a high speed of response by confining carriers in the thin active layer.Keywords
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