Low temperature growth interface for growing Boron Monophosphide on Si substrates
- 1 June 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 159-160, 288-291
- https://doi.org/10.1016/s0169-4332(00)00086-6
Abstract
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This publication has 1 reference indexed in Scilit:
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996