Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4S) , 2549
- https://doi.org/10.1143/jjap.38.2549
Abstract
We have investigated the electron mobility (µ) dependence and the electron quantized energy dependence of the electron spin relaxation time (τs) in n-type and undoped GaAs/AlGaAs multiple quantum wells at room temperature. τs ∝µ-1 obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' theory.Keywords
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