Observation of strong bulk oxidation effects in amorphous germanium by ultraviolet reflectance spectroscopy
- 1 April 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 24 (7) , 318-320
- https://doi.org/10.1063/1.1655199
Abstract
The effect of air exposure on the reflectance of evaporated amorphous and crystalline germanium for photon energies 2.5 ≤ h ν ≤ 11.7 eV has been studied in order to compare their oxidation rates. For , much larger changes in reflectance are observed in the amorphous films than are found in the crystalline films.
Keywords
This publication has 5 references indexed in Scilit:
- Structure of amorphous semiconductorsJournal of Non-Crystalline Solids, 1972
- Optical Reflection Studies of Damage in Ion Implanted SiliconJournal of Applied Physics, 1970
- The distribution of condensed defect structures formed in annealed boron-implanted siliconProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967