Ohmic contacts for moderately resistive p−type InP
- 1 January 1975
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 46 (1) , 452-453
- https://doi.org/10.1063/1.322259
Abstract
A low−resistance (0.1 Ω/mm2) Ohmic contact to moderately resistive (1−10 Ω cm) p−type InP has been developed using Au/Zn/Au metalization.This publication has 4 references indexed in Scilit:
- Preparation and properties of CdSnP2/InP heterojunctions grown by LPE from Sn solutionJournal of Applied Physics, 1974
- Efficient electroluminescence from InP diodes grown by LPE from Sn solutionsApplied Physics Letters, 1974
- CdSnP2–InP heterodiodes for near-infrared light-emitting diodes and photovoltaic detectorsApplied Physics Letters, 1973
- Pulse Electroplating of High-Resistance Materials, Poorly Contacted Devices, and Extremely Small AreasJournal of the Electrochemical Society, 1971