Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications
- 1 July 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 8 (7) , 297-299
- https://doi.org/10.1109/EDL.1987.26637
Abstract
A new resonant-tunneling (RT) functional device with two peaks in the current-voltage (I-V) characteristic has been demonstrated. Contrary to conventional RT devices, the peaks are obtained using a single resonance of the quantum well. The peak's separation is voltage tunable and the peak currents are nearly equal, which is important for a variety of device applications. Using a single device, a three-state memory cell has been implemented.Keywords
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