NOISE STUDIES IN UNIFORM AVALANCHE DIODES
- 15 November 1966
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 9 (10) , 381-383
- https://doi.org/10.1063/1.1754620
Abstract
This Letter reports avalanche noise studies on microplasma‐free guard‐ring avalanche diodes. The low and high frequency approximations of Hines' theory are compared with experimental results at 1 kHz and 3 to 9 GHz, respectively. Good agreement is found between experiment and theory at both low and high frequencies. The open‐circuit spectral voltage density is white up to the avalanche frequency ω a and decreases inversely with current. For ω ≫ ω a the spectral noise power density falls off with ω4.Keywords
This publication has 3 references indexed in Scilit:
- Noise theory for the read type avalanche diodeIEEE Transactions on Electron Devices, 1966
- Avalanche Effects in Silicon p—n Junctions. II. Structurally Perfect JunctionsJournal of Applied Physics, 1963
- Problems related to p-n junctions in siliconSolid-State Electronics, 1961