Production and identification of flux-pinning defects by electron irradiation in single crystals
- 1 May 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (18) , 10677-10683
- https://doi.org/10.1103/physrevb.45.10677
Abstract
An enhancement in of single crystals in a magnetic field is observed after irradiation with 1-MeV electrons. Typically, a factor-of-2 increase in is deduced from magnetic hysteresis loops at 10 K and 1 T with H∥c. This enhancement is about 1/2 of that produced by proton and neutron irradiations under similar measurement conditions. In situ transmission-electron-microscopy studies found no visible defects induced by electron irradiation, which means that point defects or small clusters (of size <2 nm) are responsible for the extra pinning. Annealing studies suggest that effective pinning centers for H∥c do not include oxygen vacancies in the Cu-O chains. Based on calculations of cross sections for displacements on the different sublattices, and in conjunction with the results of a calculation by Kes, we suggest that the most likely pinning defect is the displacement of a Cu atom from the -plane sites.
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