Electrical characterization and detection performances of various semi-insulating GaAs crystals for low energy gamma-rays
- 1 August 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 42 (4) , 254-257
- https://doi.org/10.1109/23.467841
Abstract
In order to investigate the correlation between the electrical characteristics of the semi-insulating GaAs and its properties as a possible detector for low energy gamma-rays, we have measured, for various materials, the forward and the reverse I-V characteristic, the capacitance as a function of the frequency at various bias voltages and the capacitance as a function of the bias voltage at various frequencies. To measure the charge collection efficiency, the energy resolution and the detection efficiency as a function of the bias voltage the crystals have been irradiated with 22, 60, 88 and 122 keV photons. The results are discussed and a comparison between materials from various factories, of different thickness and equipped with different contacts is also presented. RI Cola, Adriano/G-2379-201Keywords
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