RTP-CVD: A Single Wafer In-Situ Multiprocessing Manufacturing Technology For ULSI

Publisher Website
Google Scholar
Abstract
Future integrated circuits manufacturing will require a new class of equipment where large size single wafers are processed and several fabrication steps can be performed sequentially in the same equipment. This is made possible by rapidly changing the wafer temperature and processing environment, and by employing in-situ cleaning and in-situ process monitoring. The implementation of multiple in-situ processing steps within the same equipment has the potential to reduce particulate contamination by improved control of the wafer environment and increase throughput by reducing overall processing time. This should prove to be invaluable for VLSI manufacturing. Furthermore, each isolated process module can be integrated or "clustered" to match processing needs in an "application specific" fashion. In this paper, a novel single wafer multiprocessing technology, rapid thermal processing chemical vapor deposition (RTP-CVD), is described and experimental results are presented for multilayer in-situ growth and deposition of semiconductors and dielectrics.© (1990) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

This publication has 0 references indexed in Scilit: