Peak-to-valley ratio of small resonant-tunneling diodes with various barrier-thickness asymmetries
- 5 February 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (6) , 838-840
- https://doi.org/10.1063/1.116550
Abstract
Resonant tunneling through small double-barrier heterostructures is investigated in dependence of the charge accumulation in the quantum well and the device diameter. The study comprises a series of resonant-tunneling diodes with four different barrier-thickness ratios and diameters between 300 nm and 10 μm. Special emphasis lies on the peak-to-valley ratio of the resonant-tunneling current peaks, which drops drastically with decreasing device diameter for weak electron accumulation, while it is size independent in the strong-charging case.Keywords
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