Optical properties of highly excited ZnSe/ZnSxSe1-xmultiple-quantum-well structures
- 1 May 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (5) , 681-685
- https://doi.org/10.1088/0268-1242/7/5/011
Abstract
Optical properties of highly excited II-VI multiple quantum-well structures are investigated by means of photoluminescence, reflectivity and Raman scattering techniques. Experimental evidence of exciton-electron and exciton-exciton scattering processes in the range between I0 and 100 K is reported.Keywords
This publication has 7 references indexed in Scilit:
- Effects of strain on the optical and vibrational properties of ZnSe-ZnSxSe1-x strained-layer superlatticesJournal of Luminescence, 1990
- Optical characterization and band offsets in ZnSe- strained-layer superlatticesPhysical Review B, 1988
- Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxyJournal of Applied Physics, 1987
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Optical properties of highly excited direct gap semiconductorsPhysics Reports, 1981
- Near-band-edge photoluminescence in ZnSe grown from indium solutionJournal of Applied Physics, 1980
- On the Theory of Laser Action in Dense Exeiton SystemsPhysica Status Solidi (b), 1977