Electron-Beam Fabrication of Ion Implanted High-Performance FET Circuits

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Abstract
This paper describes the design, fabrication and test results of a high-performance IGFET circuit made by combining electron-beam technology for all masking steps and ion implantation for the diffusion steps. The circuit consists of an eleven stage ring oscillator with two FET devices per stage. The enhancement mode device is the switching element and the depletion mode is used as load. The aluminum gate length of the devices is 1 μ and the width is 5 μ. The aluminum metallization, defined with electron-beam exposure of PMMA resist, also serves as a self-aligning mask for the ion implantation of source and drain in the gate region. The average delay per stage was determined by measuring the periodicity of the circuit oscillation and dividing by 22. Test results on several circuits indicate that the average delay per stage is approximately 295 psec.

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